Two-junction photovoltaic devices
AssigneesAlliance for Sustainable Energy, LLC, Georgia Tech Research Corporation
InventorsMyles Aaron Steiner, Daniel Joseph Friedman, Ryan Matthew France, Asegun Henry
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Abstract
The present disclosure relates to a photovoltaic (PV) device that includes a first junction constructed with a first alloy and having a bandgap between about 1.0 eV and about 1.5 eV, and a second junction constructed with a second alloy and having a bandgap between about 0.9 eV and about 1.3 eV, where the first alloy includes III-V elements, the second alloy includes III-V elements, and the PV device is configured to operate in a thermophotovoltaic system having an operating temperature between about 1500° C. and about 3000° C.
Claims9
A two junction thermophotovoltaic (TPV) device comprising, in order:
- a first junction having a first composition comprising AlxGayIn1-x-yAs or GaaIn1-aAsbP1-b;
- a tunnel junction having a second composition comprising at least one of GaInAs or GaAsSb;
- and
- a second junction having a third composition comprising GacIn1-cAs, wherein:
- the first junction has a bandgap between 1.1 eV and 1.4 eV,
- the second junction has a bandgap between 0.9 eV and 1.2 eV,
- 0.05≤x≤0.25,
- 0.45≤y≤0.65,
- 0.40≤a≤0.60,
- 0.45≤b≤0.70,
- 0.60≤c≤0.80, and
- the TPV device is configured to absorb light from a blackbody operating at a temperature, Tw, between 1500° C. and 3000° C.
Dependencies are inferred from the claim text.