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US 11,777,043 B1Granted
Photodetectors with substrate extensions adjacent photodiodes
AssigneeGlobalFoundries U.S. Inc.
InventorsRamsey M. Hazbun, John J. Ellis-Monaghan, Rajendran Krishnasamy, Siva P. Adusumilli
Life of this patent
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Abstract
A substrate is formed to include a substrate base and a substrate extension. A photodiode contacts the substrate base. The substrate extension is adjacent the photodiode. An additional device contacts the substrate extension. A sidewall spacer contacts the photodiode and the substrate extension. The additional device includes conductive elements within the substrate extension adjacent the sidewall spacer.
Claims17
A structure comprising:
- a substrate comprising a substrate base having a top surface and a substrate extension comprising a semiconductor layer above and immediately adjacent to the top surface of the substrate base;
- a photodiode contacting the substrate base, wherein the substrate extension is positioned laterally adjacent the photodiode;
- an additional device contacting the substrate extension;
- and
- a sidewall spacer between the photodiode and the substrate extension,
- wherein the additional device includes conductive elements within the substrate extension adjacent the sidewall spacer, wherein the substrate extension has a substrate extension top surface, wherein the substrate extension has a facet surface adjacent the sidewall spacer and the substrate extension top surface, and wherein the facet surface is non-parallel to the substrate extension top surface.
3 more elements
A method comprising:
- providing a substrate;
- and
- forming a structure comprising:
- the substrate including a substrate base having a top surface and a substrate extension comprising a semiconductor layer immediately adjacent to the top surface of the substrate base;
- a photodiode contacting the substrate base, wherein the substrate extension positioned laterally adjacent the photodiode;
- an additional device contacting the substrate extension;
- and a sidewall spacer between the photodiode and the substrate extension, wherein the substrate extension is formed to have a substrate extension top surface, wherein the additional device includes conductive elements within the substrate extension adjacent the side wall spacer, wherein the substrate extension is formed to have a facet surface adjacent the sidewall spacer and the substrate extension top surface, and wherein the facet surface is formed to be non-parallel to the substrate extension top surface.
4 more elements
A structure comprising:
- a substrate comprising a substrate base and a substrate extension;
- a photodiode contacting the substrate base, wherein the substrate extension is adjacent the photodiode;
- an additional device contacting the substrate extension;
- and
- a sidewall spacer between the photodiode and the substrate extension,
- wherein the additional device includes conductive elements within the substrate extension adjacent the sidewall spacer, and
- wherein the sidewall spacer comprises:
- a first insulator layer contacting the photodiode and the substrate base;
- and
- a second insulator layer contacting the first insulator layer and the substrate extension.
7 more elements
Dependencies are inferred from the claim text.