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US 11,777,040 B2Granted
Semiconductor device with nanostructures
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHsin-Hsiang Tseng, Chih-Fei Lee, Chia-Pin Cheng, Fu-Cheng Chang
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Abstract
A semiconductor device includes a substrate, a photo sensing region, and a plurality of semiconductor plugs. The photo sensing region is in the substrate. The photo sensing region forms a p-n junction with the substrate. The semiconductor plugs extend from above the photo sensing region into the photo sensing region.
Claims20
A device, comprising:
- a substrate;
- a photo sensing region in the substrate, the photo sensing region forming a p-n junction with the substrate;
- and
- a plurality of semiconductor plugs extending from above the photo sensing region into the photo sensing region.
1 more element
A device, comprising:
- a substrate having a first dopant;
- a photo sensing region in the substrate, the photo sensing region having a second dopant of a conductivity type opposite a conductivity type of the first dopant;
- and
- a plurality of nanostructures protruding from a plurality of recessed regions in the photo sensing region to a position higher than a top surface of the photo sensing region.
1 more element
A device, comprising:
- a substrate;
- a photo sensing region forming an U-shaped interface with the substrate;
- and
- a plurality of pillars partially embedded in the photo sensing region, wherein the plurality of pillars having top ends higher than a top surface of the photo sensing region, and bottom ends higher than a bottom surface of the photo sensing region.
1 more element
Dependencies are inferred from the claim text.