Back to results
US 11,777,039 B2Granted
Method of fabricating thin film transistor and display including the same
AssigneeLG Display Co., Ltd.
InventorJu-Heyuck Baeck
Life of this patent
Estimating the term…
Abstract
A thin film transistor includes a gate electrode, an active layer formed of oxide semiconductor material on a substrate, and a gate insulation layer therebetween. The active layer includes a channel region corresponding to the gate electrode, a source region at one side of the channel region, and a drain region at the other side of the channel region. The source region includes a first upper portion and the drain region includes a second upper portion that includes the oxide semiconductor material and Si.
Claims16
A method of manufacturing a thin film transistor, comprising:
- forming an active layer of oxide semiconductor on a substrate, the active layer including a channel region, a source region at one side of the channel region, and a drain region at the other side of the channel region;
- forming a gate insulating material on the substrate in which the active layer is formed;
- forming a gate metallic layer on the substrate in which the gate insulating material is formed;
- forming a gate insulating layer and a gate electrode overlapping with the channel region of the active layer by patterning the gate metallic layer and the gate insulating material, wherein forming the gate insulating layer includes a dry etching process, wherein oxygen contained in the source region and the drain region is released by an etchant gas used in the dry etching process, such that the source region and the drain region of the active layer become conductive;
- forming an oxidation preventing film at an upper portion of each of the source region and the drain region by adding Si into the upper portion of each of the source region and the drain region;
- and
- forming an interlayer insulating layer on the gate electrode and the active layer including the oxidation preventing film.
4 more elements
A method of manufacturing a thin film transistor, comprising:
- forming an active layer of oxide semiconductor on a substrate, the active layer including a channel region, a source region at one side of the channel region, and a drain region at the other side of the channel region;
- forming a gate insulating material on the substrate in which the active layer is formed;
- forming a gate metallic layer on the substrate in which the gate insulating material is formed;
- forming a gate insulating layer and a gate electrode overlapping with the channel region of the active layer by patterning the gate metallic layer and the gate insulating material, the source region and the drain region of the active layer becoming conductive by a process of forming the gate insulating layer and the gate electrode;
- forming an oxidation preventing film at an upper portion of each of the source region and the drain region by adding Si into the upper portion of each of the source region and the drain region, wherein adding the Si comprises:
- forming a layer of Si on the source region and the drain region of the active layer, which become conductive;
- and
- diffusing the Si into the upper portion of each of the source region and the drain region;
- and
- forming an interlayer insulating layer on the gate electrode and the active layer including the oxidation preventing film.
7 more elements
Dependencies are inferred from the claim text.