Transistor having vertical structure and electric device
AssigneeLG Display Co., Ltd.
InventorsInTak Cho, JungSeok Seo, SeHee Park, Jaeyoon Park, SangYun Sung
Life of this patent
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Abstract
A transistor having a vertical structure can include a substrate, a first electrode disposed on the substrate, a second electrode disposed on the substrate, an insulation pattern disposed between the first electrode and the second electrode, an active layer connected between the first electrode and the second electrode, a channel area of the active layer disposed along a side surface of the insulation pattern and around an upper edge of the insulation pattern, a gate electrode disposed on the active layer, and a gate insulating film disposed between the gate electrode and the active layer.
Claims20
A transistor having a vertical structure, comprising:
- a substrate;
- a first electrode disposed on the substrate;
- a second electrode disposed on the substrate;
- an insulation pattern disposed between the first electrode and the second electrode;
- an active layer connected between the first electrode and the second electrode;
- a channel area of the active layer disposed along a side surface of the insulation pattern and around an upper edge of the insulation pattern;
- a first gate insulating film disposed to space apart from each other on an upper surface of the active layer and overlapping with portions of the first and second electrodes;
- a second gate insulating film disposed on the first gate insulating film and the active layer;
- and
- a gate electrode disposed on the second gate insulating film.
An electronic device comprising:
- a panel;
- a driver circuit configured to drive the panel;
- and
- a transistor disposed in the panel, the transistor including:
- a first electrode disposed on a substrate;
- a second electrode disposed on the substrate;
- an insulation pattern disposed between the first electrode and the second electrode;
- an active layer connected between the first electrode and the second electrode;
- a channel area of the active layer disposed along a side surface of the insulation pattern and around an upper edge of the insulation pattern;
- a first gate insulating film disposed to space apart from each other on an upper surface of the active layer and overlapping with portions of the first and second electrodes;
- a second gate insulating film disposed on the first gate insulating film and the active layer;
- and
- a gate electrode disposed on the second gate insulating film.
Dependencies are inferred from the claim text.