Multi-layer film device and method

A method of manufacturing a semiconductor device, the method comprising:

• depositing a first dielectric layer over a conductive element within a substrate;
• supporting the first dielectric layer by depositing an insert layer over and in physical contact with the first dielectric layer, wherein the insert layer has a hardness that is greater than the first dielectric layer and a K-value that is greater than the first dielectric layer;
• depositing a second dielectric layer over and in physical contact with the insert layer, wherein the second dielectric layer has a hardness that is less than the insert layer and has a K-value that is less than the insert layer;
• etching the second dielectric layer to form a via opening, wherein the via opening has a via profile angle of between about 60° and about 70°;
• and
• etching the second dielectric layer to form a trench opening at least partially into the second dielectric layer, the trench opening not extending into the insert layer or the first dielectric layer, wherein the trench opening has a trench profile angle of between about 70° and about 80°.

A semiconductor device comprising:

• a first dielectric layer over a substrate, the first dielectric layer comprising a first dielectric material;
• a second dielectric layer over and in contact with the first dielectric layer, the second dielectric layer comprising a second dielectric material with a larger hardness and a larger K-value than the first dielectric material;
• a third dielectric layer over and in contact with the second dielectric layer;
• a trench opening located in the third dielectric layer, the trench opening having a trench profile angle of between about 70° and about 80°;
• and
• a via opening located in the third dielectric layer, the via opening having a via profile angle of between about 60° and about 70°, wherein the via opening has a width no greater than about 50 μm.