Semiconductor structure and manufacturing method for the semiconductor structure

A semiconductor device, comprising:

• a fin over a substrate;
• a metal gate layer over the fin;
• and
• a ferroelectric layer between the metal gate layer and a surface of the fin, wherein the ferroelectric layer comprises hafnium oxide-based material, the hafnium oxide-based material comprises:
• a first portion of hafnium oxide with orthorhombic phase, a second portion of hafnium oxide with monoclinic phase, and a third portion of the hafnium oxide with tetragonal phase, wherein a first volume of the first portion is greater than a second volume of the second portion, and the second volume of the second portion is greater than a third volume the third portion.

A semiconductor device, comprising:

• a plurality of semiconductor layers over a substrate;
• a metal gate layer at least partially surrounding one of the plurality of semiconductor layers;
• and
• a ferroelectric layer between the metal gate layer and one of the plurality of semiconductor layers, wherein the ferroelectric layer comprises hafnium oxide-based material, the hafnium oxide-based material comprises:
• a first portion of hafnium oxide with orthorhombic phase, a second portion of hafnium oxide with monoclinic phase, and a third portion of the hafnium oxide with tetragonal phase, wherein a first volume of the first portion is greater than a second volume of the second portion, and the second volume of the second portion is greater than a third volume the third portion.