Semiconductor device
AssigneeRohm Co., Ltd.
InventorsShuhei Mitani, Yuki Nakano, Heiji Watanabe, Takayoshi Shimura, Takuji Hosoi, Takashi Kirino
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Abstract
A semiconductor device includes a semiconductor layer of a first conductivity type. A well region that is a second conductivity type well region is formed on a surface layer portion of the semiconductor layer and has a channel region defined therein. A source region that is a first conductivity type source region is formed on a surface layer portion of the well region. A gate insulating film is formed on the semiconductor layer and has a multilayer structure. A gate electrode is opposed to the channel region of the well region where a channel is formed through the gate insulating film.
Claims29
A SiC semiconductor device, comprising:
- a semiconductor layer;
- a well region of a second conductivity type well region formed on a surface layer portion of the semiconductor layer and that has a channel region defined therein;
- a source region of a first conductivity type source region formed on a surface layer portion of the well region and that includes a first region defined adjacent to the well region and a second region defined adjacent to the first region;
- a gate insulating film formed on the semiconductor layer and covering the channel region, the first region, and at least part of the second region;
- and
- a gate electrode formed on the gate insulating film and opposed to the channel region of the well region where a channel is formed through the gate insulating film,
- wherein a step is formed at the surface of the semiconductor layer between an upper surface of the first region and an upper surface of the second region so that the upper surface of the first region is formed in a higher place compared to the upper surface of the second region in a thickness direction of the semiconductor layer.
Dependencies are inferred from the claim text.