Semiconductor device

A semiconductor device, comprising:

• a first electrode;
• a second electrode, a direction from the first electrode toward the second electrode being along a first direction;
• a third electrode, the third electrode including a third electrode end portion and a third electrode other-end portion, the third electrode end portion being between the first electrode and the third electrode other-end portion in the first direction;
• a first conductive member, the first conductive member including a first conductive member end portion and a first conductive member other-end portion, the first conductive member end portion being between the first electrode and the first conductive member other-end portion in the first direction, a position in the first direction of the first conductive member end portion being between a position in the first direction of the first electrode and a position in the first direction of the third electrode end portion, the first conductive member being electrically connected with one of the second electrode or the third electrode or being electrically connectable with the one of the second electrode or the third electrode;
• a semiconductor member, the semiconductor member including a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, and a fourth semiconductor region of the first conductivity type;
• and
• a first insulating member,
• the first semiconductor region including a first partial region and a second partial region,
• the first partial region being between the first electrode and the second electrode in the first direction,
• the second semiconductor region being between the first partial region and the third semiconductor region in the first direction,
• the third semiconductor region being electrically connected with the second electrode,
• a second direction from a portion of the third electrode toward the second semiconductor region crossing the first direction,
• a direction from an other portion of the third electrode toward a portion of the first partial region being along the second direction,
• a direction from the second partial region toward the first conductive member being along the first direction,
• a direction from the first conductive member toward the first partial region being along the second direction,
• the fourth semiconductor region being located between the first electrode and the first semiconductor region in the first direction,
• the fourth semiconductor region being electrically connected with the first electrode,
• a carrier concentration of the first conductivity type in the fourth semiconductor region being greater than a carrier concentration of the first conductivity type in the first semiconductor region,
• the first partial region including a first position,
• a direction from the first conductive member end portion toward the first position being along the second direction,
• a defect density in the fourth semiconductor region being greater than a first defect density at the first position;
• and
• at least a portion of the first insulating member being between the semiconductor member and the third electrode and between the semiconductor member and the first conductive member.