Power semiconductor device having low-k dielectric gaps between adjacent metal contacts

Abstract

A semiconductor device is described. The semiconductor device includes: a Si substrate having a first main surface; a plurality of gate trenches extending from the first main surface into the Si substrate; a semiconductor mesa between adjacent gate trenches; a first interlayer dielectric on the first main surface; a plurality of first metal contacts extending through the first interlayer dielectric and contacting gate electrodes disposed in the gate trenches; a plurality of second metal contacts extending through the first interlayer dielectric and contacting the semiconductor mesas; and an air gap or a dielectric material having a lower dielectric constant than the first interlayer dielectric between adjacent first and second metal contacts. Methods of producing the semiconductor device are also described.

Dependencies are inferred from the claim text.