Transistors including first and second semiconductor materials between source and drain regions and methods of manufacturing the same

A transistor, comprising:

• a source structure comprising indium, gallium, and nitrogen;
• a first semiconductor material in contact with and laterally adjacent to the source structure, the first semiconductor material comprising gallium and nitrogen;
• a second semiconductor material laterally in series with the first semiconductor material, the second semiconductor material comprising gallium and oxygen;
• a drain structure in contact with and laterally adjacent to the second semiconductor material, the drain structure comprising indium, gallium, and nitrogen, wherein the first semiconductor material is electrically coupled to the drain structure through the second semiconductor material;
• a polarization layer between the first semiconductor material and a gate;
• and
• a source contact directly on the source structure and a drain contact directly on the drain structure.

A transistor, comprising:

• a first semiconductor material in contact with a source structure, the first semiconductor material comprising gallium and nitrogen;
• a second semiconductor material adjacent the first semiconductor material, the second semiconductor material comprising gallium and oxygen;
• a drain structure in contact with the second semiconductor material, wherein the source structure, the first semiconductor material, the second semiconductor material, and the drain structure comprise an electrical path, the electrical path comprising the first semiconductor material and the second semiconductor material in series between the source structure and the drain structure;
• and
• a polarization layer between the first semiconductor material and a gate, the gate to control the electrical path between the source structure and the drain structure.