Lateral heterojunction bipolar transistor with improved breakdown voltage and method

A structure comprising:

• a base region comprising a base layer;
• a buffer layer positioned laterally immediately adjacent to the base layer;
• and
• a collector region comprising:
• a collector layer positioned laterally immediately adjacent to the buffer layer and an additional collector layer positioned laterally immediately adjacent to the collector layer, wherein the base layer, the buffer layer, and the collector layer comprise different semiconductor materials with different bandgap sizes.

A method comprising:

• forming a base region comprising a base layer;
• forming a buffer layer positioned laterally immediately adjacent to the base layer;
• and
• forming a collector region comprising a collector layer positioned laterally immediately adjacent to the buffer layer, wherein the forming of the base region, the forming of the buffer layer and the forming of the collector region are performed so that the base layer, the buffer layer, and the collector layer comprise different semiconductor materials with different bandgap sizes, wherein the buffer layer has a larger bandgap than the base layer.