Layout to reduce current crowding at endpoints
AssigneeIdeal Power Inc.
InventorsRichard A. Blanchard, Alireza Mojab
Life of this patent
Estimating the term…
Abstract
Layout to reduce current crowding at endpoints. At least one example is a semiconductor device comprising: an emitter region defining an inner boundary in the shape of an obround with parallel sides, and the obround having hemispherical ends each having a radius; a base region having a first end, a second end opposite the first end, and base length, the base region disposed within the obround with the base length parallel to and centered between the parallel sides, the first end spaced apart from the first hemispherical end by a first gap greater than the radius, and the second end spaced apart from the second hemispherical ends by a second gap greater than the radius.
Claims20
A semiconductor device comprising:
- an emitter region defining an inner boundary in the shape of an obround with parallel sides, and the obround having a first hemispherical end and a second hemispherical end each having a radius;
- a base region having a first end, a second end opposite the first end, and base length, the base region disposed within the obround with the base length parallel to and centered between the parallel sides, the first end spaced apart from the first hemispherical end by a first gap greater than the radius by more than a manufacturing tolerance, and the second end spaced apart from the second hemispherical end by a second gap greater than the radius by more than the manufacturing tolerance.
A semiconductor device comprising:
- an emitter region defining an inner boundary in the shape of an obround with parallel sides, and the obround having a first hemispherical end and a second hemispherical end each having a radius;
- a base region having a first end, a second end opposite the first end, and base length, the base region disposed within the obround with the base length parallel to and centered between the parallel sides, the first end spaced apart from the first hemispherical end by a first gap greater than the radius by more than a manufacturing tolerance, and the second end spaced apart from the second hemispherical end by a second gap greater than the radius by more than the manufacturing tolerance;
- a base contact electrically coupled to the base region through a base window through a dielectric, the base contact defines a length parallel to the base length, and a first terminus being a closest terminus to the first end, the first terminus spaced apart from the first end by a setback distance being at least equal to the radius.
A semiconductor device comprising:
- an emitter region defining an inner boundary in the shape of an obround with parallel sides, and the obround having first and second hemispherical ends each having a radius;
- a base region having a first end, a second end opposite the first end, and base length, the base region disposed within the obround with the base length parallel to and centered between the parallel sides, the first end spaced apart from the first hemispherical end by a first gap, and the second end spaced apart from the second hemispherical end by a second gap;
- a base contact electrically coupled to the base region, the base contact defines a length parallel to the base length, and a first terminus being a closest terminus to the first end, the first terminus spaced apart from the first end by a setback distance being at least equal to the radius.
Dependencies are inferred from the claim text.