Negative-capacitance and ferroelectric field-effect transistor (NCFET and FE-FET) devices

A semiconductor device comprising:

• a semiconductor region, the semiconductor region comprising a channel region;
• and
• a gate structure over the channel region, the gate structure comprising:
• an interfacial layer disposed over the semiconductor region, the interfacial layer being a non-ferroelectric dielectric material;
• a ferroelectric dielectric layer disposed over the interfacial layer, wherein the ferroelectric dielectric layer is an orthorhombic-phase polycrystalline doped hafnium oxide, wherein a maximum peak of the dopants in the ferroelectric dielectric layer is offset from an upper surface and a lower surface of the ferroelectric dielectric layer;
• and
• a conductive material over the ferroelectric dielectric layer.

A semiconductor device comprising:

• a channel region;
• source/drain regions on opposing sides of the channel region;
• a dielectric layer over the source/drain regions;
• and
• a gate structure extending through the dielectric layer, the gate structure being over the channel region, the gate structure comprising:
• an interfacial layer disposed over the channel region, the interfacial layer being a non-ferroelectric dielectric material;
• a ferroelectric dielectric layer disposed over the interfacial layer, wherein the ferroelectric dielectric layer is an orthorhombic-phase polycrystalline hafnium oxide doped with lanthanum, wherein a dopant profile of the lanthanum in the ferroelectric dielectric layer has a full width at half maximum (FWHM) distribution, wherein the dopant profile has a maximum peak concentration offset from an upper surface of the ferroelectric dielectric layer and from a lower surface of the ferroelectric dielectric layer;
• and
• a conductive material over the ferroelectric dielectric layer.