Controlled doping in a gate dielectric layer
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShahaji B. More, Chandrashekhar Prakash Savant
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Abstract
The present disclosure describes method to form a semiconductor device having a gate dielectric layer with controlled doping. The method includes forming a gate dielectric layer on a fin structure, forming a diffusion barrier layer on the gate dielectric layer, and forming a dopant source layer on the diffusion barrier layer. The gate dielectric layer includes an interfacial layer on the fin structure and a high-k dielectric layer on the interfacial layer. A dopant of the dopant source layer diffuses into the gate dielectric layer. The method further includes doping a portion of the interfacial layer with the dopant and removing the dopant source layer. The portion of the interfacial layer is adjacent to the high-k dielectric layer.
Claims20
A method, comprising:
- forming a gate dielectric layer on a fin structure, wherein the gate dielectric layer comprises an interfacial layer on the fin structure and a high-k dielectric layer on the interfacial layer;
- forming a diffusion barrier layer comprising a nitride material on the gate dielectric layer;
- forming a dopant source layer comprising a metal oxide on the diffusion barrier layer, wherein a metal of the dopant source layer diffuses into the gate dielectric layer;
- diffusing the metal through the diffusion barrier layer to a portion of the interfacial layer, wherein the portion of the interfacial layer is adjacent to the high-k dielectric layer;
- and
- removing the dopant source layer.
A method, comprising:
- forming a first gate dielectric layer on a first fin structure and a second gate dielectric layer on a second fin structure, wherein the first gate dielectric layer comprises a first interfacial layer on the first fin structure and a first high-k dielectric layer on the first interfacial layer, and wherein the second gate dielectric layer comprises a second interfacial layer on the second fin structure and a second high-k dielectric layer on the second interfacial layer;
- forming a first diffusion barrier layer on the first and second gate dielectric layers;
- removing the first diffusion barrier layer on the first gate dielectric layer;
- forming a second diffusion barrier layer on the first gate dielectric layer and the first diffusion barrier layer;
- forming a dopant source layer on the first and second diffusion barrier layers, wherein a dopant of the dopant source layer diffuses into the first and second gate dielectric layers;
- doping a portion of the first interfacial layer and a portion of the second interfacial layer with the dopant, wherein:
- the portion of the first interfacial layer is adjacent to the first high-k dielectric layer, and
- the portion of the second interfacial layer is adjacent to the second high-k dielectric layer;
- and
- removing the dopant source layer.
A method, comprising:
- forming a gate dielectric layer on first and second fin structures, wherein the gate dielectric layer comprises an interfacial layer and a high-k dielectric layer;
- forming a first diffusion barrier layer on the gate dielectric layer over the first fin structure;
- forming a second diffusion barrier layer in contact with the first diffusion barrier layer over the first fin structure and in contact with the gate dielectric layer over the second fin structure;
- forming a dopant source layer on the first and second diffusion barrier layers, wherein the dopant source layer comprises a dopant;
- doping a portion of the interfacial layer with the dopant, wherein the doped portion of the interfacial layer is adjacent to the high-k dielectric layer;
- and
- removing the dopant source layer.
Dependencies are inferred from the claim text.