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US 11,777,010 B2Granted
Semiconductor structure and method for forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYen-Chieh Huang, Hai-Ching Chen, Yu-Ming Lin, Chung-Te Lin
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Abstract
A semiconductor structure includes a gate stack over a substrate and a blocking layer disposed between the gate stack and the substrate. The gate stack includes an upper electrode, a lower electrode, a ferroelectric layer disposed between the upper electrode and the lower electrode, and a first seed layer disposed between the ferroelectric layer and the lower electrode. The blocking layer includes doped hafnium oxide.
Claims20
A semiconductor structure, comprising:
- a gate stack over a substrate, wherein the gate stack includes:
- an upper electrode;
- a lower electrode;
- a ferroelectric layer disposed between the upper electrode and the lower electrode;
- a first seed layer disposed between the ferroelectric layer and the lower electrode;
- a second seed layer disposed between the ferroelectric layer and the upper electrode;
- and
- a first blocking layer disposed between the first seed layer and the second seed layer;
- and
- a second blocking layer disposed between the gate stack and the substrate, wherein the second blocking layer comprises doped hafnium oxide.
7 more elements
A semiconductor structure, comprising:
- a gate stack over a substrate, wherein the gate stack includes:
- an upper annealed electrode;
- a lower annealed electrode;
- a ferroelectric layer disposed between the upper annealed electrode and the lower annealed electrode;
- a first seed layer disposed between the ferroelectric layer and the lower annealed electrode;
- a second seed layer disposed between the ferroelectric layer and the upper annealed electrode;
- and
- a first blocking layer disposed between the first seed layer and the second seed layer;
- a channel layer disposed between the gate stack and the substrate;
- a second blocking layer disposed between the gate stack and the channel layer, wherein the second blocking layer comprises doped hafnium oxide, and
- a source region and a drain region within the channel layer.
8 more elements
A semiconductor structure, comprising:
- a gate stack over a substrate, wherein the gate stack includes:
- an upper electrode;
- a lower electrode;
- a ferroelectric layer disposed between the upper electrode and the lower electrode;
- a first seed layer disposed between the ferroelectric layer and the lower electrode;
- a second seed layer disposed between the ferroelectric layer and the upper electrode;
- and
- a first blocking layer disposed between the first seed layer and the second seed layer;
- a second blocking layer disposed between the gate stack and the substrate, wherein the second blocking layer comprises doped hafnium oxide, and
- a source region and a drain region formed within the substrate.
7 more elements
Dependencies are inferred from the claim text.