Gate-all-around structure and manufacturing method for the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChao-Ching Cheng, Yu-Lin Yang, I-Sheng Chen, Tzu-Chiang Chen
Life of this patent
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Abstract
A gate-all-around structure is provided. The gate-all-around structure includes a plurality of nanostructures stacked over a substrate in a vertically direction, and the nanostructures extends from a gate region to a source/drain (S/D) region. The gate-all-around structure includes a gate structure formed in the gate region around the first nanostructures, and a S/D structure formed in the S/D region. The S/D structure is in direct contact with a top surface of one of the nanostructures.
Claims20
A gate-all-around structure, comprising:
- a plurality of nanostructures stacked over a substrate in a vertically direction, wherein the nanostructures extends from a gate region to a source/drain (S/D) region;
- a gate structure formed in the gate region around the first nanostructures;
- a S/D structure formed in the S/D region, wherein the S/D structure is in direct contact with a top surface of one of the nanostructures, wherein an outer sidewall of the S/D structure is aligned with an outer sidewall of the nanostructures;
- a liner layer formed below the nanostructures, wherein the liner layer is in direct contact with the S/D structure;
- and
- an inner spacer between the gate structure and the S/D structure, wherein the inner spacer has a C-shaped structure.
A gate-all-around structure, comprising:
- a plurality of nanostructures stacked over a substrate in a vertically direction;
- a gate structure formed around the nanostructures;
- a gate spacer formed on a sidewall of the gate structure;
- a S/D structure formed adjacent to the gate structure, wherein the nanostructures extend beyond an outer surface of the gate spacer, the S/D structure has a top surface and an opposite bottom surface, and the top surface is in direct contact with one of the nanostructures, and the bottom surface is in direct contact with another one of the nanostructures;
- an isolation layer formed between the substrate and the nanostructures;
- and
- an isolation structure formed over the substrate, wherein the isolation layer is higher than a top surface of the isolation structure.
A gate-all-around structure, comprising:
- a plurality of nanostructures stacked over a substrate in a vertically direction;
- a gate structure formed in the gate region around the first nanostructures;
- a S/D structure formed adjacent to the gate structure;
- and
- an inner spacer between the gate structure and the S/D structure, wherein the nanostructures extend beyond an outer sidewall of the inner spacer, and the inner spacer has a C-shaped structure.
Dependencies are inferred from the claim text.