Semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsAkio Suzuki, Shinpei Matsuda, Shunpei Yamazaki
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Abstract
A transistor which is resistant to a short-channel effect is provided. The transistor includes a first conductor in a ring shape, an oxide semiconductor including a region extending through an inside of a ring of the first conductor, a first insulator between the first conductor and the oxide semiconductor, a second insulator between the first conductor and the first insulator, and a charge trap layer inside the ring of the first conductor. The charge trap layer is inside the second insulator and configured to be in a floating state.
Claims13
A semiconductor device comprising:
- a first conductor, the first conductor being a first ring-shaped conductor;
- an oxide semiconductor comprising a region extending through an inside of a ring of the first conductor;
- a first insulator between the first conductor and the oxide semiconductor;
- a second insulator between the first conductor and the first insulator;
- and
- a second conductor, the second conductor being a first circular-arc-shaped conductor,
- wherein the second conductor is inside the ring of the first conductor, and
- wherein the second conductor is inside the second insulator.
A semiconductor device comprising:
- a first conductor, the first conductor being a first ring-shaped conductor;
- an oxide semiconductor comprising a region extending through an inside of a ring of the first conductor;
- a first insulator between the first conductor and the oxide semiconductor;
- a second insulator between the first conductor and the first insulator;
- and
- a second conductor, the second conductor being a first circular-arc-shaped conductor,
- wherein the second conductor is inside the ring of the first conductor,
- wherein the second conductor is inside the second insulator,
- wherein the second conductor is configured to be in a floating state, and
- wherein an inner surface and an outer surface of the second conductor are in contact with the second insulator.
Dependencies are inferred from the claim text.