Semiconductor structure with wraparound backside amorphous layer
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShih-Chuan Chiu, Huan-Chieh Su, Pei-Yu Wang, Cheng-Chi Chuang, Chun-Yuan Chen, Li-Zhen Yu, Chia-Hao Chang, Yu-Ming Lin, Chih-Hao Wang
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Abstract
A semiconductor structure includes an epitaxial region having a front side and a backside. The semiconductor structure includes an amorphous layer formed over the backside of the epitaxial region, wherein the amorphous layer includes silicon. The semiconductor structure includes a first silicide layer formed over the amorphous layer. The semiconductor structure includes a first metal contact formed over the first silicide layer.
Claims20
A semiconductor structure, comprising:
- an epitaxial feature having a front side and a backside;
- an amorphous layer formed over the backside of the epitaxial feature, wherein the amorphous layer includes silicon;
- a first silicide layer formed over the amorphous layer;
- a first metal contact formed over the first silicide layer;
- a second silicide layer formed over the front side of the epitaxial feature;
- and
- a second metal contact formed over the second silicide layer.
A method of fabricating a semiconductor structure, comprising:
- exposing a first surface and respective first portions of sidewalls of an epitaxial feature;
- forming an amorphous layer over the exposed first surface and the exposed first portions of the sidewalls;
- forming a first silicide layer over the amorphous layer;
- forming a first metal contact over the first silicide layer;
- wherein, prior to the step of exposing a first surface and respective first portions of sidewalls of an epitaxial feature, the method further comprises:
- forming a second silicide layer over the epitaxial feature;
- and
- forming a second metal contact over the second silicide layer.
A semiconductor structure, comprising:
- an epitaxial feature having a first side and a second side opposite to each other;
- a first silicide layer formed over the first side of the epitaxial feature;
- a first contact formed over the first silicide layer;
- an amorphous layer formed over a second side of the epitaxial feature;
- a second silicide layer formed over the amorphous layer;
- and
- a second metal contact formed on the second silicide layer.
Dependencies are inferred from the claim text.