Laterally-diffused metal-oxide semiconductor transistor and method therefor

A method comprising:

• etching a trench in a semiconductor substrate, the trench having a first sidewall and a second sidewall;
• filling the trench with a conductive material to form a gate region;
• forming a source region in the semiconductor substrate adjacent to the first sidewall, the source region surrounded by the gate region;
• forming a drift region in the semiconductor substrate adjacent to the second sidewall, the drift region having a first conductivity type;
• forming a drain region in the drift region, the drain region separated from the second sidewall by a first distance;
• patterning a dielectric layer at a top surface of the semiconductor substrate to cover the gate region and the drift region between the second sidewall and the drain region;
• and
• forming a field plate over the dielectric layer, the field plate isolated from the conductive material and the drift region by way of the dielectric layer and a first edge of the field plate overlapping a portion of the gate region.

A method comprising:

• etching a trench in a semiconductor substrate, the trench having a first sidewall and a second sidewall;
• filling the trench with a conductive material to form a gate region;
• forming a source region in the semiconductor substrate adjacent to the first sidewall, the source region surrounded by the gate region;
• forming a drift region in the semiconductor substrate adjacent to the second sidewall, the drift region having a first conductivity type;
• forming a drain region in the drift region, the drain region separated from the second sidewall by a first distance;
• forming a body region having a second conductivity type in the semiconductor substrate adjacent to the first sidewall, the source region formed in the body region;
• patterning a dielectric layer at a top surface of the semiconductor substrate to cover the gate region and the drift region between the second sidewall and the drain region;
• and
• forming a field plate over the dielectric layer, the field plate isolated from the conductive material and the drift region by way of the dielectric layer and a first edge of the field plate overlapping a portion of the gate region.