Semiconductor device

A semiconductor device, comprising:

• a semiconductor layer having first and second sides opposite to each other in a first direction, the semiconductor layer being single crystal silicon and including a first region of a first conductivity type, a second region of a second conductivity type, and a third region of the first conductivity type in this order in the first direction from the first side to the second side;
• a first electrode on the first side;
• a second electrode on the second side;
• an array of structures formed in the semiconductor layer and arranged in a second direction that is perpendicular to the first direction and along a [100] direction of the single crystal silicon and in a third direction that is perpendicular to the first direction and not perpendicular to the second direction;
• and
• a plurality of gate electrodes corresponding to the structures, respectively, wherein
• each of the structures includes a conductive portion electrically connected to the second electrode and an insulating portion surrounding the conductive portion, and
• a first distance between a first one of the structures and a second one of the structures adjacent to the first one in the third direction is less than a second distance between the first one and a third one of the structures adjacent to the first one in the second direction.