Reverse recovery charge reduction in semiconductor devices

A rectifier device, comprising:

• a semiconductor region of n-type conductivity, the semiconductor region including a cathode region of a P-intrinsic-N (P-i-N) diode of the rectifier device;
• an anode region of p-type conductivity type disposed in the semiconductor region, an interface between the anode region and the semiconductor region defining a diode junction at a depth below an upper surface of the semiconductor region, the anode region excluding a region of n-type conductivity;
• a metal layer disposed on the anode region, the metal layer including a barrier metal layer disposed on the semiconductor region and an anode metal layer disposed on the barrier metal layer;
• and
• a plurality of openings disposed in the semiconductor region, the depth of the diode junction being constant between a first opening of the plurality of openings and a second opening of the plurality of openings, each opening of the plurality of openings:
• extending through the anode region and terminating in the cathode region;
• and
• having a respective dielectric region disposed therein, each respective dielectric region excluding a conductive electrode, and having:
• an upper surface that is disposed at a depth in the anode region that is above the depth of the diode junction;
• a lower surface that is disposed in the cathode region at a depth that is below the depth of the diode junction;
• and
• a first side surface and a second side surface, a distance between the first side surface and the second side surface defining a width of the respective dielectric region,
• each respective dielectric region extending, at the depth of the diode junction between the first side surface and the second side surface, and
• the width between the first side surface and the second side surface defining, at the depth of the diode junction, an interruption in the diode junction.