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US 11,776,995 B2Granted
Device comprising a transistor
AssigneeSTMicroelectronics (Crolles 2) SAS
InventorsAlexis Gauthier, Pascal Chevalier, Gregory Avenier
Life of this patent
Estimating the term…
Abstract
A transistor is produced by forming a first part of a first region of the transistor in a semiconductor substrate by implanting dopants through an opening in an isolating trench formed at an upper surface of the semiconductor substrate. A second region of the transistor in the opening by epitaxy.
Claims24
A transistor device of a bipolar type, comprising:
- a semiconductor substrate;
- an isolating trench in the semiconductor substrate;
- an opening extending through the isolating trench;
- a first part of a first region of the transistor located in the semiconductor substrate at a level below the isolating trench, said first part being doped with a first conductivity type and aligned with said opening;
- a second region of the transistor doped with the first conductivity type and located within the opening;
- and
- a third region of the transistor doped with a second conductivity type and located between the first part and the second region;
- wherein the first part of the first region and the second region have substantially equal horizontal dimensions.
5 more elements
A bipolar transistor, comprising:
- a semiconductor substrate;
- an isolating trench in the semiconductor substrate that is filled with isolating material;
- a first collector part of the bipolar transistor formed by a doped region of a first conductivity type in the semiconductor substrate below the isolating trench;
- a base part of the bipolar transistor formed by a doped region of a second conductivity type in the semiconductor substrate between the isolating trench and the first collector part;
- an opening in the isolating trench;
- a second collector part of the bipolar transistor aligned with said opening and formed by a doped region of the first conductivity type in the semiconductor substrate between the base part and the first collector part;
- and
- an emitter part of the bipolar transistor in the opening formed by epitaxial semiconductor material doped with the first conductivity type;
- wherein the second collector part and the emitter part in the opening have substantially equal horizontal dimensions.
6 more elements
Dependencies are inferred from the claim text.