High density metal insulator metal capacitor
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWei Kai Shih, Kuo-Liang Wang
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Abstract
Semiconductor devices and methods are disclosed herein. In one example, a disclosed semiconductor device includes: an insulation layer, a first electrode with sidewalls and a bottom surface in contact with the insulation layer; a second electrode with sidewalls and a bottom surface in contact with the insulation layer; and an insulator formed between the first electrode and the second electrode. The insulator is coupled to a sidewall of the first electrode and coupled to a sidewall of the second electrode.
Claims20
A semiconductor device, comprising:
- an insulation layer;
- and
- a dielectric layer comprising:
- a first electrode with sidewalls and a bottom surface in contact with the insulation layer,
- a second electrode with sidewalls and a bottom surface in contact with the insulation layer, and
- an insulator formed between the first electrode and the second electrode, wherein the insulator is coupled to a sidewall of the first electrode and coupled to a sidewall of the second electrode, wherein:
- the first electrode is electrically connected to a logic high voltage,
- the second electrode is electrically connected to a logic low voltage, and wherein:
- the bottom surface of the first electrode has a first rectangular shape;
- the bottom surface of the second electrode has a second rectangular shape;
- and
- the first rectangular shape and the second rectangular shape have same dimensions and a same area smaller than 25 square micrometers.
A semiconductor device, comprising:
- a substrate;
- an insulation layer on the substrate;
- a dielectric layer on the insulation layer;
- a plurality of first electrodes formed within the dielectric layer;
- and
- a plurality of second electrodes formed within the dielectric layer, wherein
- the first electrodes and the second electrodes are interlaced with each other and form an electrode array extending along a first direction, and
- top surfaces of the first electrodes and the second electrodes have a same rectangular shape with:
- a first dimension extending along the first direction, and a second dimension that is greater than the first dimension and extending along a second direction perpendicular to the first direction, and wherein:
- each of the first electrodes and the second electrodes includes a conductive material;
- the dielectric layer comprises an insulating structure formed between the first electrodes and the second electrodes;
- each of the plurality of first electrodes has sidewalls and a bottom surface in contact with the insulation layer;
- each of the plurality of second electrodes has sidewalls and a bottom surface in contact with the insulation layer;
- and
- the insulating structure is coupled to the sidewalls of the first electrodes and the second electrodes.
A method for forming a semiconductor device, comprising:
- forming an insulation layer on a substrate;
- depositing a dielectric layer on the insulation layer;
- and
- forming a plurality of electrodes within the dielectric layer, wherein
- the plurality of electrodes comprises first electrodes and second electrodes that are interlaced with each other and form an electrode array extending along a first direction, and
- top surfaces of the plurality of electrodes have a same rectangular shape with:
- a first dimension extending along the first direction, and a second dimension that is greater than the first dimension and extending along a second direction perpendicular to the first direction,
- wherein forming the insulation layer comprises:
- depositing a first oxide layer on the substrate;
- depositing a nitride layer on the first oxide layer;
- and
- depositing a second oxide layer on the nitride layer.
Dependencies are inferred from the claim text.