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US 11,776,979 B2Granted
Photosensitive device comprising patterned semiconductor polarizer
AssigneeUnited Microelectronics Corp.
InventorCheng-Yu Hsieh
Life of this patent
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Abstract
A photosensitive device includes a semiconductor substrate and a photodiode. The semiconductor substrate has a patterned semiconductor polarizer having a semiconductor surface. The photodiode is in the semiconductor substrate.
Claims17
A photosensitive device, comprising:
- a semiconductor substrate having a patterned semiconductor polarizer having a semiconductor surface, wherein the semiconductor substrate has a rear semiconductor surface and a front semiconductor surface opposing to the rear semiconductor surface, the semiconductor surface of the patterned semiconductor polarizer is the rear semiconductor surface;
- a photodiode in the semiconductor substrate;
- a trench isolation element in the semiconductor substrate, wherein the trench isolation element is extended from the semiconductor surface to the front semiconductor surface and comprises opposing surfaces respectively exposed from the semiconductor surface and the front semiconductor surface;
- and
- a reflective grid element on a light incident side of the patterned semiconductor polarizer, wherein the reflective grid element reflects a light onto the semiconductor surface of the patterned semiconductor polarizer before the light is polarized by the patterned semiconductor polarizer, and the reflective grid element is directly on the trench isolation element.
2 more elements
A photosensitive device, comprising:
- a photodiode;
- a reflective grid element;
- a patterned semiconductor polarizer, wherein the photodiode and the reflective grid element are respectively on opposing sides of the patterned semiconductor polarizer such that a light is reflected by the reflective grid element before passing through the patterned semiconductor polarizer and arriving at the photodiode;
- and
- a trench isolation element, wherein the trench isolation element and the reflective grid element are respectively on opposing sides of the patterned semiconductor polarizer, the trench isolation element comprises a first surface and a second surface opposite to the first surface, the first surface is higher than the photodiode in a longitudinal direction, the second surface is lower than the photodiode in the longitudinal direction, and the reflective grid element is directly on the trench isolation element.
2 more elements
Dependencies are inferred from the claim text.