Display device

A display device comprising:

• a substrate comprising a display area and a non-display area;
• a first thin-film transistor located in the non-display area;
• and
• a second thin-film transistor and a third thin-film transistor located in the display area,
• wherein the first thin-film transistor comprises:
• a first semiconductor pattern comprising a first poly silicon;
• a first gate electrode overlapping the first semiconductor pattern;
• and
• a first source electrode and a first drain electrode connected to the first semiconductor pattern,
• wherein the second thin-film transistor comprises:
• a second semiconductor pattern and a third semiconductor pattern comprising a first oxide semiconductor;
• a second gate electrode overlapping the second semiconductor pattern;
• a third gate electrode overlapping the third semiconductor pattern;
• a second source electrode and a second drain electrode connected to the second semiconductor pattern and the third semiconductor pattern through a contact hole;
• a first insulation film provided between the second semiconductor pattern and the second gate electrode;
• and
• a second insulation film provided between the second semiconductor pattern and the first insulation film, wherein the first insulation film has a higher hydrogen particle content than the second insulation film, and
• wherein the third thin-film transistor comprises:
• a fourth semiconductor pattern comprising a first oxide semiconductor;
• a fourth gate electrode overlapping the fourth semiconductor pattern;
• and
• a third source electrode and a third drain electrode connected to the fourth semiconductor pattern.