Semiconductor device
AssigneeRenesas Electronics Corporation
InventorNao Nagata
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Abstract
A semiconductor device includes a semiconductor substrate having first and second surfaces, an insulated gate bipolar transistor (IGBT) and a diode formed on the semiconductor substrate, wherein the diode comprises a drift layer of a first conductivity type formed so as to have a first region on the first surface of the semiconductor substrate, a first body layer of a second conductivity type formed so as to have a second region adjacent to the first region at an upper portion of the drift layer, a first floating layer of the second conductivity type formed so as to have a third region adjacent to the first region at an upper portion of the drift layer, a first trench electrode formed in a region adjacent to the first floating layer at an upper portion of the drift layer, and a first control gate formed on top of the first region.
Claims9
A semiconductor device comprising:
- a semiconductor substrate having a first surface and a second surface;
- and
- an insulated gate bipolar transistor (IGBT) and a diode formed on the semiconductor substrate,
- wherein the diode comprising:
- a drift layer of a first conductivity type formed so as to have a first region on the first surface of the semiconductor substrate;
- a first body layer of a second conductivity type formed so as to have a second region adjacent to the first region at an upper portion of the drift layer of the first conductivity type;
- a first floating layer of the second conductivity type formed so as to have a third region adjacent to the first region at an upper portion of the drift layer of the first conductivity type;
- a first trench electrode formed in a region adjacent to the first floating layer at an upper portion of the drift layer of the first conductivity type;
- and
- a first control gate formed on top of the first region, and
- wherein the IGBT comprising:
- second and third trench electrodes formed on the first surface at an upper portion of the drift layer of the first conductivity type;
- a hole barrier layer of the first conductivity type formed between the second and third trench electrodes at an upper portion of the drift layer of the first conductivity type;
- a second body layer of the second conductivity type formed on the hole barrier layer of the first conductivity type;
- and
- an emitter layer of the first conductivity type formed on the first surface at an upper portion of the second body layer of the second conductivity type.
Dependencies are inferred from the claim text.