TVS diode circuit with high energy dissipation and linear capacitance

A transient voltage suppression (TVS) circuit, comprising:

• a first TVS diode coupled between a first terminal of the TVS circuit and a first node;
• a silicon controlled rectifier including an anode coupled to a second node and a cathode coupled to a third node;
• and
• a diode bridge coupled between the second node and third node and a second terminal of the TVS circuit, wherein the diode bridges include,
• (a) a second diode comprising a cathode coupled to the first node and an anode coupled to the second node,
• (b) a third diode comprising an anode coupled to the first node and a cathode coupled to the third node,
• (c) a fourth diode comprising an anode coupled to the second node and a cathode coupled to a second terminal of the TVS circuit, and
• (d) a fifth diode comprising an anode coupled to the second terminal and a cathode couple to the third node.

A method of making a transient voltage suppression (TVS) circuit, comprising:

• providing a first TVS diode coupled between a first terminal of the TVS circuit and a first node;
• providing a silicon controlled rectifier including an anode coupled to a second node and a cathode coupled to a third node;
• and
• providing a diode bridge coupled between the second node and third node and a second terminal of the TVS circuit by,
• (a) providing a second diode comprising a cathode coupled to the first node and an anode coupled to the second node,
• (b) providing a third diode comprising an anode coupled to the first node and a cathode coupled to the third node,
• (c) providing a fourth diode comprising an anode coupled to the second node and a cathode coupled to a second terminal of the TVS circuit, and
• (d) providing a fifth diode comprising an anode coupled to the second terminal and a cathode couple to the third node.