US 11,776,934 B2 · Semiconductor apparatus and fabrication method thereof

Abstract

A semiconductor apparatus includes a channel layer, a barrier layer, a source contact and a drain contact, a first doped group III-V semiconductor, a group III-V semiconductor, and a second doped group III-V semiconductor. The barrier layer is disposed on the channel layer. The source contact and the drain contact are disposed on the channel layer. The first doped group III-V semiconductor is disposed on the barrier layer. The group III-V semiconductor is disposed on the first doped group III-V semiconductor and between the source contact and the drain contact. The second doped group III-V semiconductor is disposed on the group III-V semiconductor and between the source contact and the drain contact. The group III-V semiconductor has a central region covered by the second doped group III-V semiconductor and a peripheral region free from coverage by the second doped group III-V semiconductor.

Claims20

Dependent claims

A semiconductor apparatus, comprising:

a channel layer;
a barrier layer disposed on the channel layer;
a source contact and a drain contact disposed on the channel layer;
a first doped group III-V semiconductor disposed on the barrier layer and between the source contact and the drain contact;
a group III-V semiconductor disposed on the first doped group III-V semiconductor and between the source contact and the drain contact;
and
a second doped group III-V semiconductor disposed on the group III-V semiconductor and between the source contact and the drain contact, wherein the group III-V semiconductor has a central region covered by the second doped group III-V semiconductor and a peripheral region free from coverage by the second doped group III-V semiconductor,
wherein an entirety of the first doped group III-V semiconductor, the group III-V semiconductor, and the second doped group III-V semiconductor is spaced apart from the source contact and the drain contact.

5 more elements

Dependencies are inferred from the claim text.

Semiconductor apparatus and fabrication method thereof

Life of this patent

Semiconductor apparatus and fabrication method thereof

Life of this patent

Abstract

Claims20