Semiconductor device including a solder compound containing a compound Sn/Sb

A method of making a semiconductor device, comprising:

• providing a semiconductor die comprising a first surface and a second surface opposite to the first surface;
• arranging a first metallization layer on the first surface of the semiconductor die;
• arranging a first solder layer on the first metallization layer, wherein the first solder layer contains the compound Sn/Sb;
• providing a first contact member comprising a Cu-based base body and a Ni-based layer disposed on a main surface of the Cu-based base body, wherein the first contact member is connected with the Ni-based layer to the first solder layer;
• arranging a second metallization layer on the second surface of the semiconductor die;
• arranging a second solder layer on the second metallization layer, the second solder layer containing a compound Sn/Sb;
• and
• providing a second contact member comprising a Cu-based base body and a Ni-based layer disposed on a main surface of the Cu-based base body, wherein the second contact member is connected with the Ni-based layer to the second solder layer.

A method of making a semiconductor device, comprising:

• providing a semiconductor chip comprising a first main surface and a second main surface opposite to the first main surface;
• arranging a first contact member comprising a Cu-based base body and a Ni-based layer disposed on a main surface of the Cu-based base body;
• and
• arranging a solder compound containing the compound Sn/Sb between the semiconductor chip and the Ni-based layer, wherein the material composition of the compound Sn/Sb is such that the ratio of Sb in the compound is in a range from 17% to 90%.

A method of making a semiconductor device, comprising:

• providing a semiconductor die comprising a first surface and a second surface opposite to the first surface;
• arranging a first metallization layer disposed on the first surface of the semiconductor die;
• arranging a first solder layer disposed on the first metallization layer, wherein the first solder layer contains the compound Sn/Sb;
• and
• providing a first contact member comprising a Cu-based base body and a Ni-based layer disposed on a main surface of the Cu-based base body;
• wherein the first contact member is connected with the Ni-based layer to the first solder layer, and
• wherein the solder layer further comprises an Ni/Sb phase.