Method of manufacturing semiconductor device
AssigneeNanya Technology Corporation
InventorsChiang-Lin Shih, Pei-Jhen Wu, Ching-Hung Chang, Hsih-Yang Chiu
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Abstract
The present disclosure provides a method of manufacturing a semiconductor device. The method includes forming an interconnect layer on a semiconductor component, wherein the interconnect layer contains at least one metal pad electrically coupled to the semiconductor component; depositing an insulating layer on the interconnect layer; depositing a bonding dielectric on the insulating layer; and forming a re-routing layer penetrating through the bonding dielectric and the insulating layer and contacting the interconnect layer.
Claims6
A method of manufacturing a semiconductor device, the method comprising:
- forming an interconnect layer on a semiconductor component, wherein the interconnect layer contains at least one metal pad electrically coupled to the semiconductor component;
- depositing an insulating layer on the interconnect layer;
- depositing a bonding dielectric on the insulating layer;
- and
- forming a re-routing layer penetrating through the bonding dielectric and the insulating layer and contacting the interconnect layer;
- wherein the forming of the re-routing layer comprises:
- creating a first opening in the insulating layer to expose a portion of the metal pad;
- filling in the first opening simultaneously with the deposition of the bonding dielectric;
- creating a second opening in the bonding dielectric and recreating the first opening;
- and
- depositing a conductive material in the first opening and the second opening.
Dependencies are inferred from the claim text.