Method for preparing semiconductor device structure with manganese-containing lining layer

A method for preparing a semiconductor device structure, comprising:

• forming a first conductive layer over a semiconductor substrate;
• forming a first dielectric layer over the first conductive layer;
• forming a second conductive layer over the first dielectric layer;
• forming a second dielectric layer over the second conductive layer;
• forming a third conductive layer over the second dielectric layer;
• forming a first conductive plug penetrating through the first dielectric layer and electrically connecting the first conductive layer to the second conductive layer, wherein the first conductive plug comprises copper (Cu);
• forming a first lining layer between the first conductive plug and the first dielectric layer, wherein the first lining layer comprises manganese (Mn);
• forming a second conductive plug in the second dielectric layer, wherein the second conductive plug electrically connects the second conductive layer to the third conductive layer, and wherein the second conductive plug comprises copper (Cu);
• and
• forming a second lining layer between the second conductive plug and the second dielectric layer, wherein the second lining layer comprises manganese (Mn), wherein the first conductive plug and the second conductive plug are in a pattern-dense region, and an air gap is between the first lining layer and the first dielectric layer.