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US 11,776,911 B2Granted
Semiconductor device and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHung-Ming Chen, Yu-Chang Lin, Chung-Ting Li, Jen-Hsiang Lu, Hou-Ju Li, Chih-Pin Tsao
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Abstract
A method includes forming a gate structure on a substrate; forming a gate spacer on a sidewall of the gate structure; forming a carbon-containing layer on the gate spacer; diffusing carbon from the carbon-containing layer into a portion of the substrate below the gate spacer; forming a recess in the substrate on one side of the gate spacer opposite to the gate structure; and forming an epitaxy feature in the recess of the substrate.
Claims20
A method, comprising:
- forming a gate structure over a substrate;
- forming a spacer layer over the gate structure;
- forming a carbon-containing layer over the spacer layer;
- performing an annealing process to diffuse carbon dopants from the carbon-containing layer into the spacer layer and the substrate, such that a first carbon-containing diffusion barrier is formed in the spacer layer and a second carbon-containing diffusion barrier is formed in the substrate, and the first carbon-containing diffusion barrier is vertically aligned with the second carbon-containing diffusion barrier;
- and
- forming an epitaxy structure in the substrate.
3 more elements
A method, comprising:
- forming a gate structure on a substrate;
- forming a gate spacer layer on a sidewall of the gate structure;
- forming a carbon-containing layer on the gate spacer layer;
- diffusing carbon from the carbon-containing layer into a portion of the substrate below the gate spacer layer;
- etching the gate spacer layer to form a gate spacer on the sidewall of the gate structure;
- forming a recess in the substrate on one side of the gate spacer opposite to the gate structure;
- and
- forming an epitaxy feature in the recess of the substrate.
5 more elements
A method, comprising:
- forming a gate structure on a substrate;
- forming a gate spacer layer on a sidewall of the gate structure;
- forming a carbon-containing layer over the gate spacer layer;
- performing an annealing process, such that a first carbon-containing diffusion barrier is formed in the gate spacer layer and a second carbon-containing diffusion barrier is formed in the substrate, and the first carbon-containing diffusion barrier is vertically aligned with the second carbon-containing diffusion barrier;
- removing the carbon-containing layer after performing the annealing process;
- removing a horizontal portion of the gate spacer layer to form a gate spacer on the sidewall of the gate structure, wherein a surface of the substrate is exposed by the gate spacer;
- and
- forming an epitaxy structure in the substrate.
5 more elements
Dependencies are inferred from the claim text.