Semiconductor device with carbon hard mask and method for fabricating the same

A semiconductor device, comprising:

• a substrate;
• conductive layers positioned on the substrate, wherein the conductive layers are spaced apart with each other to form a conductive layer trench therebetween;
• a carbon hard mask layer positioned on the conductive layers, wherein the carbon hard mask layer has a trench formed therethrough, wherein the trench is aligned with the conductive layer trench between the conductive layers;
• an insulating layer comprising a lower portion and an upper portion integrally extended from the lower portion, wherein the lower portion is positioned along the carbon hard mask layer through the trench thereof and positioned between an adjacent pair of the conductive layers through the conductive layer trench, and the upper portion is positioned on the carbon hard mask layer;
• and
• a conductive via positioned along and extended through the upper portion of the insulating layer and the carbon hard mask layer, and extended to directly contact with one of the adjacent pair of the conductive layers in order to electrically couple the conductive via with the conductive layer.