US 11,776,902 B2Granted

Semiconductor device, an image unit and an endoscope system

AssigneeOlympus Corporation

InventorsKatsumi Hosogai, Satoru Adachi, Takatoshi Igarashi, Satoshi Nasuno

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Abstract

A semiconductor device includes a semiconductor substrate, a trench capacitor arranged on the semiconductor substrate, a first wiring layer, a second wiring layer, a first TSV penetrating the semiconductor substrate outside the trench capacitor, a second TSV penetrating the semiconductor substrate outside the trench capacitor, a first connecting terminal connected to the first TSV, a second connecting terminal connected to the first TSV, a third connecting terminal connected to the second TSV, and a fourth connecting terminal connected to the second TSV. A plurality of connecting terminals including the first through fourth connecting terminals are arranged dispersively over an entire area of the first wiring layer and the second wiring layer of the semiconductor device, thereby stabilizing voltage supplied to an image unit and achieving a stable image signal.

Claims17

Dependent claims

A semiconductor device, comprising:

a semiconductor substrate having a first surface and a second surface opposing to each other;
a trench capacitor arranged on the first surface of the semiconductor substrate;
a first wiring layer arranged on the first surface of the semiconductor substrate and covering the trench capacitor;
a second wiring layer arranged on the second surface of the semiconductor substrate;
a first TSV (through-silicon via) penetrating the semiconductor substrate outside the trench capacitor;
a second TSV (through-silicon via) penetrating the semiconductor substrate outside the trench capacitor;
a first connecting terminal arranged on the first wiring layer, and connected to the first TSV;
a second connecting terminal arranged on the second wiring layer, and connected to the first TSV;
a third connecting terminal arranged on the first wiring layer, and connected to the second TSV;
and
a fourth connecting terminal arranged on the second wiring layer, and connected to the second TSV,
wherein a plurality of connecting terminals including the first through fourth connecting terminals are arranged dispersively over an entire area of the first wiring layer and the second wiring layer of the semiconductor device,
wherein the first surface of the semiconductor substrate includes a first region where the trench capacitor occupies and a second region where the first and second TSVs pass through, and
wherein the plurality of connecting terminals including at least the first and third connecting terminals are evenly spaced apart on a region of the first wiring layer, the region of the first wiring layer overlapping with the first region of the first surface of the semiconductor substrate where the trench capacitor occupies.

11 more elements

A semiconductor device, comprising:

a semiconductor substrate having a first surface and a second surface opposing to each other;
a trench capacitor arranged on the first surface of the semiconductor substrate;
a first wiring layer arranged on the first surface of the semiconductor substrate and covering the trench capacitor;
a second wiring layer arranged on the second surface of the semiconductor substrate;
a first TSV (through-silicon via) penetrating the semiconductor substrate outside the trench capacitor;
a second TSV (through-silicon via) penetrating the semiconductor substrate outside the trench capacitor;
a first connecting terminal arranged on the first wiring layer, and connected to the first TSV;
a second connecting terminal arranged on the second wiring layer, and connected to the first TSV;
a third connecting terminal arranged on the first wiring layer, and connected to the second TSV;
and
a fourth connecting terminal arranged on the second wiring layer, and connected to the second TSV,
wherein a plurality of connecting terminals including the first through fourth connecting terminals are arranged dispersively over an entire area of the first wiring layer and the second wiring layer of the semiconductor device, and
wherein the first wiring layer includes a substrate contact and a gate contact.

10 more elements

An image unit, comprising:

an image sensor including an image pixel on a front surface and a ground terminal and a VDD terminal on a back surface;
and
a semiconductor device,
wherein the semiconductor device includes:
a semiconductor substrate having a first surface and a second surface opposing to each other;
a trench capacitor arranged on the first surface of the semiconductor substrate;
a first wiring layer arranged on the first surface of the semiconductor substrate and covering the trench capacitor;
a second wiring layer arranged on the second surface of the semiconductor substrate;
a first TSV (through-silicon via) penetrating the semiconductor substrate outside the trench capacitor;
a second TSV (through-silicon via) penetrating the semiconductor substrate outside the trench capacitor;
a first connecting terminal arranged on the first wiring layer, and connected to the first TSV;
a second connecting terminal arranged on the second wiring layer, and connected to the first TSV;
a third connecting terminal arranged on the first wiring layer, and connected to the second TSV;
and
a fourth connecting terminal arranged on the second wiring layer, and connected to the second TSV,
wherein a plurality of connecting terminals including the first through fourth connecting terminals are arranged dispersively over an entire area of the first wiring layer and the second wiring layer of the semiconductor device, and
wherein the second and fourth connecting terminals of the semiconductor device are connected with the VDD and the ground terminals of the image sensor, respectively.

14 more elements

Dependencies are inferred from the claim text.

Facts

Application: 17/375,314Filed 14 Jul 2021 · us provisional application
Priority: 22 Jul 2020
Published: US 2022/0028782 A127 Jan 2022
Granted: 3 Oct 2023
Term ends: Not estimatedThe source records don’t support an estimate.

Classification10 codes

A61B 1/051
Characterised by the image sensor, e.g. camera, being in the distal end portion: details of CCD assembly
H10W 20/42
Characterised by their conductive parts: vias, e.g. via plugs
A61B 1/05
Combined with photographic or television appliances: characterised by the image sensor, e.g. camera, being in the distal end portion
H10F 39/802
Constructional details of image sensors: geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes