Semiconductor structure and method for manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorTung-Jiun Wu
Life of this patent
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Abstract
A semiconductor structure includes a first dielectric layer, a first metal feature in the first dielectric layer, at least one etch stop layer on the first dielectric layer, a second dielectric layer on the at least one etch stop layer. The semiconductor structure further includes a first barrier sublayer on a sidewall of the second dielectric layer and the at least one etch stop layer, a second barrier sublayer on the first barrier sublayer and the first metal feature, and a second metal feature on the second barrier sublayer.
Claims20
A method for manufacturing a semiconductor structure, comprising:
- depositing a first dielectric layer on a substrate;
- forming a first metal feature in the first dielectric layer;
- depositing at least one etch stop layer on the first dielectric layer;
- depositing a second dielectric layer on the at least one etch stop layer;
- forming a trench in the second dielectric layer and the at least one etch stop layer, wherein the first metal feature is exposed through the trench;
- forming a first barrier sublayer on a sidewall of the second dielectric layer after the first metal feature is exposed through the trench;
- depositing a second barrier sublayer on the first barrier sublayer and the first metal feature;
- and
- depositing a second metal feature on the second barrier sublayer.
A method for manufacturing a semiconductor structure, comprising:
- depositing a first dielectric layer;
- forming a first metal feature in the first dielectric layer;
- depositing at least one etch stop layer on the first dielectric layer and the first metal feature;
- depositing a second dielectric layer on the at least one etch stop layer;
- forming a trench in the second dielectric layer and the at least one etch stop layer, wherein the first metal feature is exposed through the trench;
- depositing a first barrier sublayer on the sidewall and a bottom of the trench;
- removing a portion of the first barrier sublayer formed on the bottom of the trench to expose the first metal feature;
- depositing a second barrier sublayer on the first barrier sublayer and the first metal feature;
- and
- forming a second metal feature on the second barrier sublayer.
A method for manufacturing a semiconductor structure, comprising:
- depositing a first dielectric layer;
- forming a first metal feature in the first dielectric layer;
- depositing at least one etch stop layer on the first dielectric layer and the first metal feature;
- depositing a second dielectric layer on the at least one etch stop layer;
- forming a trench in the second dielectric layer and the at least one etch stop layer, wherein the first metal feature is exposed through the trench;
- forming a barrier layer on the second dielectric layer and the at least one etch stop layer and in contact with the first metal feature;
- forming a second metal feature in the trench on the barrier layer;
- and
- implanting the second dielectric layer to form an implanted region in the second dielectric layer after forming the second metal feature.
Dependencies are inferred from the claim text.