Semiconductor package structure and method for manufacturing the same

A method for manufacturing a semiconductor package structure, comprising:

• providing a semiconductor structure, the semiconductor structure having a first surface, a second surface and a third surface extending between the first surface and the second surface, and the first surface, the second surface and the third surface define a through-silicon via (TSV) recessed from the first surface, wherein the semiconductor structure comprises a conductive trace disposed adjacent to first surface, the second surface and the third surface of the semiconductor structure;
• and
• forming a tenting structure on the first surface of the semiconductor structure, wherein the tenting structure and the TSV define a cavity, and wherein forming the tenting structure further comprises:
• forming a dielectric film covering the TSV;
• and
• removing a portion of the dielectric material to form the tenting structure.

A method for manufacturing a semiconductor package structure, comprising:

• providing a semiconductor structure, the semiconductor structure having a first surface, a second surface and a third surface extending between the first surface and the second surface, and the first surface, the second surface and the third surface define a through-silicon via (TSV) recessed from the first surface, wherein the semiconductor structure comprises a conductive trace disposed adjacent to first surface, the second surface and the third surface of the semiconductor structure;
• forming a tenting structure on the first surface of the semiconductor structure, wherein the tenting structure and the TSV define a cavity;
• and
• performing a heat technique on the tenting structure so as to form a recess recessed from a bottom surface of the tenting structure.

A semiconductor package structure, comprising:

• a semiconductor structure having an inner lateral surface, a first top surface connected to the inner lateral surface and a cavity defined by the inner lateral surface and the first top surface
• and
• a tenting structure at least partially disposed over the inner lateral surface and the first top surface of the semiconductor structure,
• wherein the tenting structure has a bottom surface facing the first top surface of the semiconductor structure, and the bottom surface of the tenting structure has an arc-shaped profile, and, wherein the semiconductor structure comprises a second top surface outside the cavity, and wherein the tenting structure has a first length in contact with the second top surface of the semiconductor structure and a second length in contact with the inner lateral surface of the semiconductor structure, and the first length is greater than the second length.