US 11,776,885 B2 · Substrate, semiconductor device package and method of manufacturing the same

Abstract

A substrate includes a first dielectric layer having a first surface and a second dielectric layer having a first surface disposed adjacent to the first surface of the first dielectric layer. The substrate further includes a first conductive via disposed in the first dielectric layer and having a first end adjacent to the first surface of the first dielectric layer and a second end opposite the first end. The substrate further includes a second conductive via disposed in the second dielectric layer and having a first end adjacent to the first surface of the second dielectric layer. A width of the first end of the first conductive via is smaller than a width of the second end of the first conductive via, and a width of the first end of the second conductive via is smaller than the width of the first end of the first conductive via.

Claims16

Dependent claims

A conductive trace structure, comprising:

a low-density conductive structure;
and
a high-density conductive structure on the low-density conductive structure, the high-density conductive structure comprising a first via having a width substantially increasing towards the low-density conductive structure;
wherein the low-density conductive structure comprises a second via having a width substantially increasing towards the high-density conductive structure;
the high-density conductive structure comprises a first dielectric layer and a first patterned conductive layer on a first surface of the first dielectric layer and electrically connected to the first via;
and
the low-density conductive structure comprises a second patterned conductive layer on a second surface of the first dielectric layer, wherein the first surface is opposite to the second surface.

4 more elements

Dependencies are inferred from the claim text.

Substrate, semiconductor device package and method of manufacturing the same

Life of this patent

Substrate, semiconductor device package and method of manufacturing the same

Life of this patent

Abstract

Claims16