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US 11,776,873 B2Granted
Semiconductor structure and manufacturing method for the same
AssigneeMacronix International Co., Ltd.
InventorsDai-Ying Lee, Ming-Hsiu Lee
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Abstract
A semiconductor structure and a manufacturing method for the same. The semiconductor structure includes a plug element and a via element. The plug element includes a tungsten plug. The plug element has a plug size in a lateral direction. The via element is electrically connected on the plug element. The via element is non-symmetrical with respect a center line of the plug element extending along a longitudinal direction. The via element has a via size in the lateral direction. The plug size is bigger than the via size.
Claims5
A manufacturing method for a semiconductor structure, comprising:
- forming a hole in a dielectric layer;
- forming a tungsten plug inside the hole;
- forming a dielectric film on the tungsten plug;
- forming an aperture in the dielectric film, wherein the aperture is smaller than the hole and is misaligned with a center line of the hole;
- and
- forming a via element inside the aperture, wherein the via element is electrically connected on the tungsten plug, the tungsten plug has an inner plug surface defining a seam, the seam and the via element are non-overlapping.
3 more elements
Dependencies are inferred from the claim text.