Direct bonded copper substrates fabricated using silver sintering
AssigneeSemiconductor Components Industries, LLC
InventorsErik Nino Mercado Tolentino, Shutesh Krishnan, Francis J. Carney
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Abstract
A method includes applying a sintering precursor material layer to each of a first surface and a second surface of a ceramic tile, and assembling a precursor assembly of a direct bonded copper (DBC) substrate by coupling a first leadframe on the sinter precursor material layer on the first surface of the ceramic tile and a second leadframe on the second surface of the sinter precursor material layer on a second surface of the ceramic tile such that the ceramic tile is disposed between the first leadframe and the second leadframe. The method further includes sinter bonding the first leadframe and the second leadframe to the ceramic tile to form a sinter bonded DBC substrate.
Claims20
A direct bonded copper (DBC) substrate, comprising:
- a ceramic tile;
- an intermediate metal layer disposed directly on a surface of the ceramic tile between the ceramic tile and a sinter material layer disposed on a side of the ceramic tile, the sinter material layer being made of metal particles, the intermediate metal layer having a portion inter diffused into the sinter material layer;
- and
- a leadframe sinter bonded to the side of the ceramic tile by the sinter material layer.
An assembly, comprising:
- a ceramic tile, the ceramic tile having a first intermediate metal layer disposed directly on a first surface of the ceramic tile between the ceramic tile and a first sintering precursor material layer disposed on a first side of the ceramic tile and having a second intermediate metal layer disposed directly on a second surface of the ceramic tile between the ceramic tile and a second sintering precursor material layer disposed on a second side of the ceramic tile, the first intermediate metal layer having a portion inter diffused into the first sintering precursor material layer and the second intermediate metal layer having a portion inter diffused into the second sintering precursor material layer;
- a first leadframe coupled to the first sintering precursor material layer on the first side of the ceramic tile;
- and
- a second leadframe coupled to the second sintering precursor material layer on the second side of the ceramic tile such that the ceramic tile is disposed between the first leadframe and the second leadframe.
An assembly, comprising:
- a ceramic tile having a first intermediate metal layer disposed directly on a first surface of the ceramic tile between the ceramic tile and a first unsintered sintering precursor material layer disposed on a first side of the ceramic tile, and having a second intermediate metal layer disposed directly on a second surface of the ceramic tile between the ceramic tile and a second unsintered sintering precursor material layer disposed on a second side of the ceramic tile, wherein the first and second intermediate metal layers each include at least one of a titanium-nickel-silver (TiNiAg), a nickel-silver (NiAg) or a silver (Ag) layer;
- a first leadframe coupled to the first unsintered sintering precursor material layer on the first side of the ceramic tile;
- and
- a second leadframe coupled to the second unsintered sintering precursor material layer on the second side of the ceramic tile such that the ceramic tile is disposed between the first leadframe and the second leadframe,
- the assembly forming a precursor of a direct bonded copper (DBC) substrate.
Dependencies are inferred from the claim text.