Semiconductor device and method for manufacturing semiconductor device

A semiconductor device comprising:

• a substrate that has a first surface and a second surface that is located opposite the first surface;
• a first element that is disposed on the first surface;
• and
• a first resin layer that is disposed on the first surface and that is disposed around the first element in a plan view,
• wherein
• the substrate includes a glass epoxy substrate and a wiring layer,
• the first element includes
• a semiconductor layer on the first resin layer, such that portions of the semiconductor layer are in contact with the first resin layer, and the first resin layer is between the semiconductor layer and the substrate,
• an electrode portion that is located on a surface of the semiconductor layer facing the substrate, and
• an insulating layer that is located opposite the electrode portion with the semiconductor layer interposed therebetween,
• the electrode portion is connected to the wiring layer, and
• a height of the first resin layer from the first surface is more than a height of the first element from the first surface.