Plasma apparatus and methods of manufacturing semiconductor device using the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJoonsung Lee, Suhong Kim, Youngwon Shin, Hyungchul Cho, Jaehyoung Lee, Hyunjae Jung
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Abstract
A method of manufacturing a semiconductor device includes preparing etched mapping data by measuring an etching amount of a wafer subjected to an etching process, determining an error region in which the etching amount of the wafer is outside of a reference value, based on the etched mapping data, compensating distribution of an electrical field applied to the wafer, and compensating exhaust distribution of a process gas, changed by the compensating distribution of an electrical field.
Claims20
A method of manufacturing a semiconductor device comprising:
- placing a test wafer on a lower electrode inside a process chamber, the lower electrode encircled by a gas exhaust plate, the gas exhaust plate having a plurality of openings;
- etching the test wafer in the process chamber by applying an electrical field to a process gas to produce plasma;
- preparing etched mapping data by measuring an etched amount from the test wafer;
- determining an error region in which the etched amount of the test wafer is outside of a reference value, the reference value being based on the etched mapping data;
- adjusting at least one of an upper cross-section of at least one of the plurality of openings, an upper cross-section of at least one of the plurality of openings in a region adjacent to the error region, and an upper cross-section of at least one of the plurality of openings of a region in which the gas exhaust plate is in contact with a sidewall of the process chamber;
- and
- adjusting a size of a lower cross-section of at least one of the plurality of openings.
A method of manufacturing a semiconductor device, comprising:
- etching a test wafer by applying an electrical field to a process gas to produce plasma in a process chamber;
- regulating the plasma by venting the process gas through a gas exhaust plate, the gas exhaust plate having a plurality of openings connected to a gas exhaust passage;
- preparing etched mapping data by measuring etched amounts of the test wafer;
- determining an error region in which an etching amount of the test wafer is outside of a reference value, the reference value being based on the etched mapping data;
- increasing or reducing an electrical conductivity of the electrical field, applied to the error region, by at least adjusting a size of an upper cross-section of at least one of an adjacent plurality of openings in a region adjacent to the error region, adjusting a size of an upper cross-section of the plurality of openings, and adjusting a size of an upper cross-section of a plurality of openings of a region connected to a sidewall of the process chamber;
- and
- changing an exhaust distribution of the process gas exhausted through the gas exhaust passage by adjusting a size of a lower cross-section of an adjacent opening.
A plasma processing device, comprising:
- a process chamber having a sidewall;
- an upper electrode in an upper portion of the process chamber;
- a lower electrode in a lower portion of the process chamber, the lower electrode having a mounting region on which to mount a wafer;
- a gas exhaust passage between the sidewall and the lower electrode, the gas exhaust passage configured to exhaust a process gas;
- and
- a gas exhaust plate encircling the lower electrode and having a plurality of openings connected to the gas exhaust passage,
- wherein the plasma processing device includes a gap between the sidewall of the process chamber and the gas exhaust plate, and
- the gas exhaust plate includes a plurality of modular sections, each configured to hold a modular replacement section, such that the gas exhaust plate is configured to be adjustable.
Dependencies are inferred from the claim text.