Fin field effect transistor having airgap and method for manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsSai-Hooi Yeong, Kai-Hsuan Lee, Yu-Ming Lin, Chi-On Chui
Life of this patent
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Abstract
A method of manufacturing a FinFET includes at last the following steps. A semiconductor substrate is patterned to form trenches in the semiconductor substrate and semiconductor fins located between two adjacent trenches of the trenches. Gate stacks is formed over portions of the semiconductor fins. Strained material portions are formed over the semiconductor fins revealed by the gate stacks. First metal contacts are formed over the gate stacks, the first metal contacts electrically connecting the strained material portions. Air gaps are formed in the FinFET at positions between two adjacent gate stacks and between two adjacent strained materials.
Claims20
A fin field effect transistor (FinFET), comprising:
- a semiconductor substrate, comprising semiconductor fins disposed thereon and separated from each other;
- a plurality of insulators, disposed on the semiconductor substrate, and each being between two adjacent semiconductor fins of the semiconductor fins;
- gate structures, disposed over the semiconductor substrate, wherein the gate structures are disposed over portions of the semiconductor fins and portions of the plurality of insulators;
- a plurality of sources, each disposed at a first side of a respective one of the gate structures;
- and
- a plurality of drains, each disposed at a second side of a respective one of the gate structures opposing to the first sides,
- wherein air gaps are simultaneously disposed in the FinFET at positions between any two adjacent gate structures of the gate structures along a lengthwise direction of the semiconductor fins and in at least one of the insulators.
A fin field effect transistor (FinFET), comprising:
- a semiconductor substrate, comprising trenches and semiconductor fins disposed between the trenches;
- gate structures, disposed over the semiconductor substrate, wherein the gate structures are disposed over portions of the semiconductor fins and portions of the trenches;
- and
- strained material portions, disposed over portions of the semiconductor fins revealed by the gate structures;
- and
- silicide layers, wrapping around the strained material portions,
- wherein air gaps are disposed in the FinFET at positions between any two adjacent gate structures of the gate structures along a lengthwise direction of the semiconductor fins and positions between the gate structures and the semiconductor substrate within the trenches.
A fin field effect transistor (FinFET), comprising:
- a semiconductor substrate, comprising trenches and semiconductor fins disposed between the trenches;
- gate structures, disposed over the semiconductor substrate, wherein the gate structures are disposed over portions of the semiconductor fins and portions of the trenches;
- strained material portions, standing on portions of the semiconductor fins revealed by the gate structures;
- silicide layers, covering and electrically connected to the strained material portions;
- first metal contacts, disposed over and electrically connected to the silicide layers;
- and
- second metal contacts, disposed over and electrically connected to the gate structures,
- wherein air gaps are disposed in the FinFET at positions between any two adjacent gate structures of the gate structures along a lengthwise direction of the semiconductor fins and positions between the gate structures and the semiconductor substrate within the trenches.
Dependencies are inferred from the claim text.