Semiconductor device and method of manufacture
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHung-Hao Chen, Che-Cheng Chang, Horng-Huei Tseng, Wen-Tung Chen, Yu-Cheng Liu
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Abstract
A semiconductor device and method of manufacture are provided in which a passivation layer is patterned. In embodiments, by-products from the patterning process are removed using the same etching chamber and at the same time as the removal of a photoresist utilized in the patterning process. Such processes may be used during the manufacturing of FinFET devices.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- placing a semiconductor substrate into a first chamber;
- prior to removing the semiconductor substrate from the first chamber, etching a passivation layer through a photoresist layer;
- prior to removing the semiconductor substrate from the first chamber, performing a liner removal process to expose an external connection through the passivation layer, wherein after the liner removal process reaction by-products are present along sidewalls of the passivation layer, and wherein a first portion of the external connection has a sidewall aligned with a dielectric material, a second portion of the external connection being embedded within the dielectric material;
- and
- prior to removing the semiconductor substrate from the first chamber, removing the photoresist layer and the reaction by-products.
A method of manufacturing a semiconductor device, the method comprising:
- applying a photoresist to a passivation layer over an external contact over a semiconductor substrate;
- removing the photoresist, the removing the photoresist comprising:
- a pre-heating removal step with a first set of process conditions;
- a stabilization ashing step with a second set of process conditions different from the first set of process conditions;
- and
- a stripping step with a third set of process conditions different from the first set of process conditions and different from the second set of process conditions, the stripping step removing both the photoresist as well as reaction by-products from a previous etching process.
A method of manufacturing a semiconductor device, the method comprising:
- placing a semiconductor substrate into a first chamber;
- etching a passivation layer through a photoresist layer;
- performing a liner removal process to expose an external connection through the passivation layer, wherein after the liner removal process reaction by-products are present along sidewalls of the passivation layer;
- and
- removing the photoresist and the reaction by-products, wherein the etching, the performing, and the removing are each performed in a first chamber, and wherein the removing further comprises:
- performing a heating step with a first set of process conditions;
- modifying the first set of process conditions to a second set of process conditions in a stabilization step;
- and
- modifying the second set of process conditions to a third set of process conditions in a stripping step, the stripping step removing both the photoresist as well as the reaction by-products from a previous etching process.
Dependencies are inferred from the claim text.