Semiconductor device and methods for manufacturing thereof

A semiconductor device manufacturing method, comprising:

• providing a substrate having a lower surface and an upper surface opposing the lower surface, wherein a first insulating dielectric layer is disposed underneath the lower surface, a first connecting pad is disposed within the first insulating dielectric layer, and a second insulating dielectric layer is disposed on the upper surface;
• disposing a metal connection member in the substrate, the metal connection member penetrating through a first portion of the second insulating dielectric layer, the substrate, and a second portion of the first insulating dielectric layer to connect the first connecting pad;
• forming an annular hollow space surrounding the metal connection member, the annular hollow space having a first surface exposing the metal connection member, a second surface exposing the substrate, and a bottom surface;
• forming a dielectric liner layer within the annular hollow space, the dielectric liner layer covering the first surface, the second surface and the bottom surface, and having a thickness that is smaller than half a gap between the first surface and the second surface along a direction perpendicular to the first surface and the second surface, thereby forming an air gap;
• forming a liner cover on the dielectric liner to hermetically close the air gap, thereby forming a spacer surrounding the metal connection member;
• and
• disposing a second connecting pad within the second insulating dielectric layer, on the liner cover and connecting the metal connection member.

A semiconductor device manufacturing method, comprising:

• providing a substrate having a lower surface and an upper surface opposing the lower surface, wherein a first insulating dielectric layer is disposed underneath the lower surface, a first connecting pad is disposed within the first insulating dielectric layer, and a second insulating dielectric layer is disposed on the upper surface;
• disposing a metal connection member in the substrate, the metal connection member penetrating through a first portion of the second insulating dielectric layer, the substrate, and a second portion of the first insulating dielectric layer to connect the first connecting pad;
• forming an annular hollow space surrounding the metal connection member, the annular hollow space having a first surface exposing the metal connection member, a second surface exposing the substrate, and a bottom surface;
• forming a dielectric layer within the annular hollow space to cover the first surface, the second surface and the bottom surface, and continuing to grow the dielectric layer to form a liner cover to close the annular hollow space, thereby forming an spacer which confines an air gap and surrounds the metal connection member;
• and
• disposing a second connecting pad within the second insulating dielectric layer, the second connecting pad located on the liner cover and connecting the metal connection member.