Contact structure for semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYun-Yu Hsieh, Jeng Chang Her, Cha-Hsin Chao, Yi-Wei Chiu, Li-Te Hsu, Ying Ting Hsia
Life of this patent
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Abstract
A method of forming a semiconductor device includes forming a source/drain region on a substrate and forming a first interlayer dielectric (ILD) layer over the source/drain region. The method further includes forming a second ILD layer over the first ILD layer, forming a source/drain contact structure within the first ILD layer and the second ILD layer, and selectively removing a portion of the source/drain contact structure to form a concave top surface of the source/drain contact structure.
Claims20
A semiconductor device, comprising:
- a fin structure on a substrate;
- an epitaxial source/drain (S/D) region on the fin structure;
- a first interlayer dielectric (ILD) layer over the epitaxial S/D region;
- an etch stop layer (ESL) on the first ILD layer;
- a second ILD layer on the ESL;
- a first conductive structure in contact with the epitaxial S/D region and having a concave surface, wherein the first conductive structure extends through the second ILD layer and the concave surface is below a top surface of the second ILD layer;
- and
- a second conductive structure in contact with the concave surface of the first conductive structure.
A semiconductor device, comprising:
- a fin structure on a substrate;
- a source/drain region on the fin structure;
- a first interlayer dielectric (ILD) layer over the source/drain region;
- a first etch stop layer (ESL) on the first ILD layer;
- a second ILD layer on the first ESL;
- second ESL on the second ILD layer;
- a source/drain contact structure over the source/drain region and positioned within the first ILD layer, the first ESL, and the second ILD layer, wherein the source/drain contact structure comprises a concavely-curved top surface within the second ILD layer;
- and
- an interconnect structure through the second ESL and in contact with the concavely-curved top surface.
A semiconductor device, comprising:
- a transistor comprising:
- a fin structure on a substrate;
- a source/drain region over the fin structure;
- and
- a gate structure adjacent to the source/drain region;
- a first interlayer dielectric (ILD) layer over the source/drain region;
- a second ILD layer over the first ILD layer and the gate structure;
- a first conductive structure connected to the transistor, wherein the first conductive structure has a concave surface;
- and
- a second conductive structure in contact with the concave surface of the first conductive structure, wherein the second conductive structure comprises a top surface having a first curvature and a bottom surface having a second curvature greater than the first curvature.
Dependencies are inferred from the claim text.