Semiconductor arrangement and method of making

A semiconductor arrangement, comprising:

• a first dielectric layer over a substrate;
• a metal layer over the first dielectric layer;
• a conductive structure interfacing with a first sidewall and a top surface of a first portion of the metal layer;
• and
• a second dielectric layer interfacing with a second sidewall of the first portion of the metal layer, the second sidewall diametrically opposite the first sidewall.

A method for forming a semiconductor arrangement, comprising:

• forming a patterned hard mask and a patterned dielectric layer over a metal layer, wherein the patterned dielectric layer is disposed over the patterned hard mask;
• forming a barrier layer over the patterned dielectric layer;
• removing a portion of the barrier layer to define a first opening, wherein the first opening exposes a top surface of the patterned dielectric layer, a sidewall of the patterned hard mask, and a top surface of the metal layer;
• removing a first portion of the metal layer through the first opening;
• forming a conductive structure in the first opening;
• and
• removing the patterned dielectric layer and the patterned hard mask after forming the conductive structure to define a second opening.