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US 11,776,844 B2Granted
Contact via structures of semiconductor devices
AssigneeGlobalfoundries Singapore Pte. Ltd.
InventorsYung Fu Chong, Rui Tze Toh, Fangyue Liu
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Abstract
The embodiments herein relate to contact via structures of semiconductor devices and methods of forming the same. A semiconductor device is provided. The semiconductor device includes a substrate, a conductive feature over the substrate, and a contact via structure over and electrically coupling to the conductive feature. The contact via structure has a concave profile.
Claims11
A method of forming a semiconductor device, comprising:
- forming a conductive feature over a substrate;
- and
- forming a contact via structure to electrically couple to the conductive feature, wherein forming the contact via structure, comprises:
- forming a dielectric layer over the conductive feature;
- forming an opening having a width wider than a width of the conductive feature in the dielectric layer;
- forming dielectric spacers in the opening, wherein the dielectric spacers define a contact opening, the contact opening having a bottom width at most as wide as the width of the conductive feature;
- and
- depositing a conductive material in the contact opening to form the contact via structure, wherein the contact via structure has a curved concave profile and an upper width wider than the width of the conductive feature.
5 more elements
A method of forming a semiconductor device, comprising:
- forming a conductive feature over a substrate;
- forming a first portion of a dielectric layer over the conductive feature;
- forming an opening over the conductive feature in the first portion of the dielectric layer, the opening has a width wider than a width of the conductive feature;
- forming dielectric spacers in the opening, the dielectric spacers form a second portion of the dielectric layer to define a contact opening over the conductive feature, wherein sidewalls of the dielectric layer over the conductive feature have a convex profile;
- and
- forming a contact via structure in the contact opening to electrically couple to the conductive feature.
3 more elements
Dependencies are inferred from the claim text.