Semiconductor package and manufacturing method thereof

A manufacturing method of a semiconductor package, comprising:

• forming a plurality of conductive connectors on a first side of a semiconductor substrate,
• laminating a curable material on the semiconductor substrate, the curable material covering and surrounding the conductive connectors;
• curing the curable material at a temperature in a range from 130 to 200° C., so as to form a cured material covering and surrounding the conductive connectors;
• thinning the semiconductor substrate from a second side opposite to the first side after the curing;
• and
• dicing the semiconductor substrate with the cured material to form at least one semiconductor device after the thinning, wherein after the dicing, top surfaces of the conductive connectors are buried in the cured material.

A manufacturing method of a semiconductor package, comprising:

• providing a wafer having a plurality of device regions separated by scribed lines;
• providing a plurality of conductive connectors on a first side of the wafer in each of the device regions;
• forming a bubble-containing film on the wafer, the bubble-containing film covering the connective connectors in each of the device regions and covering the scribe lines;
• thinning the wafer from a second side opposite to the first side after forming the bubble-containing film;
• and
• performing a singularization process along the scribe lines to separate the device regions with the bubble-containing film and therefore form a plurality of semiconductor devices after the thinning, wherein after the singularization process, top surfaces of the conductive connectors are buried in the bubble-containing film.