Pattern forming method

A pattern forming method for forming a pattern on a substrate, comprising:

• preparing a substrate on a base of which a plurality of core materials arranged in a convex shape and in a line shape, and first and second line materials arranged in a convex shape and in a line shape on one side and the other side of each of the core materials, respectively, are formed;
• selectively forming a mask material on the second line material by a process including anisotropic film formation;
• by a process including etching using a line mask having a line-shaped hole at a portion corresponding to a region where line cutting of the first line material is to be performed, etching and removing the first line material in that region;
• selectively forming a mask material on the first line material by a process including anisotropic film formation;
• by a process including etching using the line mask having a line-shaped hole at a portion corresponding to a region where line cutting of the second line material is to be performed, etching and removing the second line material in that region;
• and
• removing the core material,
• wherein the line-shaped holes of the line mask extend perpendicular to the direction in which the first and second line materials extend, and
• wherein said selectively forming the mask material on the second line material includes:
• forming the mask material on the second line material and the core material by the anisotropic film formation;
• and
• forming a filler on the entire surface and then removing the mask material on the core material by etchback or CMP so that the mask material remains only on the second line material.